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Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155
Figure 1: Schematic representation of the deposition process of Parylene C with the respective chemical react...
Figure 2: AFM measurements of the surface roughness of Parylene C thin films. Reprinted with permission from [30]...
Figure 3: XRD spectra of Parylene C films: as-deposited with constant deposition rate and thermally annealed ...
Figure 4: Schematic illustration of the flexible OFET fabrication procedure with Parylene C as a substrate an...
Figure 5: Transfer characteristics of 10 OTFTs after bending and crumpling tests: (a) Photograph of a device ...
Figure 6: Thin Parylene C layers breakdown voltage as a function of thickness. Reprinted with permission from ...
Figure 7: (a) Mobility μ(Vg) curves measured for four different gate insulators. For the device based on Pary...
Figure 8: 10 μm × 10 μm AFM images of tetracene thin films on different dielectric surfaces at different nomi...
Figure 9: (a) Transistor architecture of the three different transistor stacks investigated, (b) threshold vo...
Figure 10: Transfer characteristics measured during the continuous bias stress of 125 h. (a) Bottom-gate, top-...
Figure 11: Volumetric reconstruction of the Parylene C-coated microscopy glass (left, atop) and calculated amp...
Figure 12: Volumetric reconstruction of the Parylene C-coated OFET structure (left, atop) and calculated ampli...
Figure 13: Transfer characteristics recorded under ambient conditions of a fullerene transistor without encaps...